2.1 - 29 2.1 OMH310 omh315 dual 50 volt, 15 and 20 amp h-bridge with current and temperature sensing in a low profile plastic package 4 11 r0 dual, low voltage, low r ds(on) , mosfet h-bridge circuit in a plastic package features ? h-bridge configuration ? zener gate protection ? 10 m shunt resistor ? 2 linear thermal sensors, one for each bridge ? isolated package ? output currents up to 20 amps description this series of mosfet switches is configured as a dual h-bridge with common v dd lines, precision series shunt resistor in the source line, and sensing elements to monitor the substrate temperature of each switch. this device is ideally suited for stepping motor control applications where size, performance, and efficiency are key. maximum ratings (t c = @ 25c) part v ds r ds(on) i d package number (volts) (m ) (amps) OMH310 50 100 15 mp-3 omh315 50 70 20 mp-3 absolute maximum ratings (t c = @ 25c unless otherwise noted) parameter OMH310 omh315 units drain source voltage, v ds 50 50 v drain-gate (r gs = 1m ), v dgr 50 50 v continuous drain current, i d @ t c = 25c 15 25 a continuous drain current, i d @ t c = 70c 11 16 a pulse drain current, i dm (1) 56 100 a maximum power dissipation, p d @ t c = 25c (2) 20 50 w maximum power dissipation, p d @ t c = 70c (2) 1 1 18 w linear derating factor, junction-to-case 0 . 2 0.33 w/c thermal resistance, junction-to-case 5.0 3.0 c/w notes: (1) pulse test: pulse width 300 sec. duty cycle 1.5%. (2) maximum junction temperature = 125c.
2.1 - 30 OMH310 omh315 2.1 electrical characteristics: OMH310 (t c = 25 unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics drain-source breakdown voltage, i d = 250 a, v gs = 0 v (br)dss 50--v zero gate voltage drain current = v gs , v ds = max. rat. i dss - - 25.0 a v ds = max. rat. x 0.8, t c = 70c - - 500.0 a gate-body leakage, v gs = 12 v i gss - - 500 na on characteristics gate-threshold voltage, v ds = v gs , i d = 250 a v gs(th) 2.0 - 4.0 v static drain-source on-resistance, v gs = 10 vdc, i d = 9.0 a r ds(on) - - 0.1 static drain-source on-resistance t c = 70c - - 0.2 on state drain current, v ds > i d(on) x r ds(on) max., v gs = 10 v i d(on) 15--a dynamic characteristics forward transconductance, v ds > i d(on) x r ds(on) max., i d = 9.0a g fs 3.0 - - mho input capacitance v ds = 25 v, c iss - - 650 pf output capacitance v gs = 0, c oss - - 450 pf reverse transfer capacitance f = 1.0 mhz c rss - - 280 pf switching characteristics turn-on delay time t d(on) - - 30 ns rise time v dd = 30 v, i d = 3 a, t r - - 85 ns turn-off delay time r gs = 50 , v gs = 10 v t d(off) - - 90 ns fall time t f - - 110 ns source drain diode characteristics source - drain current i sd --14a source - drain current pulsed i sdm *--56a forward on-voltage, i sd = 28 a, v gs = 0 v sd - - 1.8 v reverse recovery time i sd = 13 a, di/dt = 100 a/sec t rr - 120 - ns reverse recovered charge q rr - 0.15 - c resistor characteristics resistor tolerance r s 9.0 10 11 m temperature coefficient, -40c to +70c t cr - 100 - ppm * indicates pulse test 300 sec, duty cycle 1.5%
2.1 - 31 OMH310 omh315 2.1 electrical characteristics: omh315a (t c = 25 unless otherwise specified) characteristic symbol min. typ. max. unit off characteristics drain-source breakdown voltage, i d = 250 a, v gs = 0 v (br)dss 50--v zero gate voltage drain current = v gs , v ds = max. rat. i dss - - 250 a v ds = max. rat. x 0.8, t c = 70c - - 750 a gate-body leakage, v gs = 12 v i gss - - 500 na on characteristics gate-threshold voltage, v ds = v gs , i d = 250 a v gs(th) 2.0 - 4.0 v static drain-source on-resistance, v gs = 10 vdc, i d = 10 a r ds(on) - - 0.07 static drain-source on-resistance t c = 70c - - 0.14 on state drain current, v ds > i d(on) x r ds(on) max., v gs = 10 v i d(on) 20--a dynamic characteristics forward transconductance, v ds > i d(on) x r ds(on) max., i d = 10 a g fs 5.0 - - mho input capacitance v ds = 25 v, c iss - 1020 - pf output capacitance v gs = 0, c oss - 500 - pf reverse transfer capacitance f = 1.0 mhz c rss - 120 - pf switching characteristics turn-on delay time t d(on) - - 50 ns rise time v dd = 30 v, i d = 10 a, t r - - 75 ns turn-off delay time r gs = 4.7 , v gs = 10 v, t d(off) - - 50 ns fall time r l = 2.4 t f - - 50 ns source drain diode characteristics source - drain current i sd --25a source - drain current (pulsed) i sdm * - - 100 a forward on-voltage, i sd = 28 a, v gs = 0 v sd - - 2.4 v reverse recovery time t rr - 100 - ns reverse recovered charge i sd = 13 a,di/dt = 100 a/sec q rr - 0.15 - c resistor characteristics resistor tolerance r s 9.0 10 11 m temperature coefficient, -40c to +70c t cr - 100 - ppm * indicates pulse test 300 sec, duty cycle 1.5%
schematic mechanical outline OMH310 omh315 2.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 q1 r1 z1 q3 r3 z3 q5 r5 z5 q2 r2 z2 q4 r4 z4 q6 r6 z6 q7 r7 z7 q8 r8 z8 ptc 1 ptc 2 rs rs 7 6 5 8 11 12 13 9 16 10 21 22 14 15 20 19 17 34 32 26 31 30 29 28 24 25 27 1 2 34 33 23 18 .360 .180 .020 .360 max. 2.000 1.350 .150 (4) plcs. 4.000 3.000 .150 .500 .500 .250 .250 .600 .325 .050 (34) plcs. .300 2.450 .135 pin 1: gate q2 pin 2: source q2 pin 3: ptc 1 pin 4: ptc 1 pin 5: gate q4 pin 6: source q4 pin 7: sense r 1 pin 8: sense r 1 pin 9: gate q6 pin 10: source q6 pin 11: return sense pin 12: return pin 13: return pin 14: gate q8 pin 15: source q8 pin 16: sense r 2 pin 17: sense r 2 pin 34: gate q1 pin 33: source q1 pin 32: output q1, q2 pin 31: gate q3 pin 30: source q3 pin 29: v m pin 28: v m pin 27: v m pin 26: output q3, q4 pin 25: gate q5 pin 24: source q5 pin 23: output q5, q6 pin 22: +ptc pin 21: -ptc pin 20: gate q7 pin 19: source q7 pin 18: output q7, q8 1 contact factory for lead bending options. mounting recommendations: maximum mounting torque: 3.0 mn. the module must be attached to a flat heat sink (flatness 100? maximum).
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